摘要
运用时域有限差分(FDTD)方法建立了薄膜中节瘤缺陷在高斯激光照射下电磁场响应模型,分析了节瘤的深度、起始颗粒大小和入射光角度对薄膜中电磁场的影响。结果表明:节瘤缺馅对薄膜中电场强度有显著的加强作用,其内部峰值场强是入射光的6倍,大而浅节瘤缺陷对倾斜入射p偏振态的激光具有最高的加强效应.
Electric field modeling of nodular defects is performed to investigate the interaction between defective multilayer coatings and Gaussian profile laser beam.Light intensity is significantly enhanced as large as 6 times within the nodular defects.Different geometries of defects irradiated by laser beams at 0 to 40 deg incident laser angles are analyzed.Nodules with large but shallow seeds,or irradiation of 40 deg p-polarized laser beam,tends to produce the greatest enhancement effect.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第11期6588-6591,共4页
Acta Physica Sinica
基金
固体激光技术国家级重点实验室基金资助的课题.~~
关键词
多层介质薄膜
中红外
节瘤缺陷
高斯光
multilayer coating,mid-infrared,nodular defect,Gaussian laser