摘要
在电子封装用的A1N陶瓷多晶衬底上生长250nm的Ti膜，并进行快速退火。用RBS（卢瑟福背散射）、AES（俄歇电子能谱）、SIMS（二次离子质谱）和XRD（X射线衍射）等实验技术对界面反应进行了分析研究，用划痕实验测量了退火对Ti／A1N界面粘附力的影响。实验结果表明：快速退火时，Ti，A1，N以及A1N中掺杂的O均发生明显的界面扩散和界面反应。样品表面的O和A1N衬底中掺杂的O都向Ti膜中扩散，在较低的退火温度下生成TiO2；在较高的退火温度下与扩散到Ti膜中的A1反应，在Ti膜中间形成Al2O3层。N向Ti中扩散，并与Ti反应生成TiN。在薄膜和衬底之间有Ti的氧化物生成。粘附力的测量结果表明：在较低的温度下进行快速退火可以明显提高Ti／A1N界面的强度，在较高的温度下，界面强度有所下降。
A 250 nm Ti film was deposited on an electronic packaging polycrystalline A1N substrate.The sample was then annealed in a rapid themal processor. The interface processes were analyzed with RBS,AES,SIMS and XRD. The interface adherence was measured by a scratch test. The experimental result shows that diffusion and interface reactions occurred with the film component Ti,Al,N and the doped O in A1N substrate when the sample was fast annealed. When the sample was annealed,both of the O adsorbed on the surface and doped in the A1N substrate diffused into the Ti film. At a low temperature,TiO2 was produced while at higher temperatures O reacted with the diffused Al in the Ti film and produced a Al2O3 layer in the middle of the film. N diffused into Ti film and produced TiN with interface reaction. Ti oxide was produced at the interface between the film and the substrate. The result of the scratch test shows that the interface adherence was distinctly improved by fast annealing at a low temperature and droped a little at a higher temperature.
出处
《真空科学与技术》
CSCD
北大核心
1997年第3期160-166,共7页
Vacuum Science and Technology
基金
国家自然科学基金
关键词
电子封装
界面反应
二次离子质谱
钛
薄膜
Electronic packaging,Interface reaction,Secondary ion mass spectrometry
