摘要
运用俄歇深度剖析和俄歇化学效应研究了Ti／SiO2的界面还原反应。结果表明，在薄膜样品的制备过程中，金属Ti可以和SiO2发生界面还原反应，形成TiSi和TiO2物种。薄膜样品在RTA处理时，Ti和SiO2的界面反应大幅度地增加，尤其是当RTA温度高于700℃时，界面反应增加得更快。700℃温度可能是Ti和SiO2界面反应的活化温度。随着反应时间的增加，界面反应也相应增加。当Ti层的厚度增加时，也有利于Ti和SiO2的界面反应。
We have studied the interface reaction of Ti/SiO2 using AES depth profile analysis and chemical effect. The results have shown that Ti could reduce SiO2 and formed TiSi and TiO2, species during Ti deposition. Rapid thermal annealing (RTA) treatment also could increase the interface reaction of Ti with SiO2. With the increasing of RTA temperature and time,the interface reaction increased. The thickness of Ti had effect on the reactive kinetics.
出处
《真空科学与技术》
CSCD
1994年第6期390-396,共7页
Vacuum Science and Technology
