摘要
提出了利用原子力显微镜灰阶阳极氧化方法加工Si、Ge、GaAs等晶体材料为基础的红外微透镜阵列.加工了3×3的红外硅微透镜阵列,微透镜的高度和表面直径重复性误差分别为0.2nm和6.0nm,微透镜的平均曲率半径为510.8nm.分析了原子力显微镜加工红外微透镜产生面型结构误差的原因,并提出了减小面型结构误差的方法.利用此种方法加工的折射、衍射和混合红外微透镜阵列可以进一步缩小红外成像系统的尺寸.
Infrared microlens array on the substrate of Si,Ge,and GaAs fabricated with atomic force microscope gray scale anodic oxidation was presented.A 3×3 infrared silicon micro-lens array was fabricated using this method.The repeatability errors of the height and surface diameter of the nine microlens respectively were 0.2 nm and 6.0nm.The average curvature radius of the microlens was 510.8 nm.The causes of surface figure errors of infrared microlens fabricated with atomic force microscope anodic oxidation were studied and the methods of reducing surface figure errors were put forward.Refractive,diffractive and hybrid infrared microlens arrays fabricated with this approach can be developed to further reduce the size of infrared imaging system.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2007年第4期659-662,共4页
Acta Photonica Sinica
基金
国家自然科学基金(60278005)
中国博士后科学基金(2005038459)资助
关键词
微透镜阵列
红外焦平面阵列
原子力显微镜阳极氧化
灰阶
Microlens array
Infrared focal plane array
Atomic force microscope anodic oxidation
Gray scale
