摘要
利用溶液回路电流和红外热像监测,研究了电极距离对半导体激光电化学刻蚀速率和电化学横向钻蚀特性的影响。实验结果表明,电极距离由15 cm缩短为5 cm后,回路电流数值增大,其变化率增加约15.4%,等量化学热生成时间至少缩短2/3,说明缩短电极距离使半导体激光电化学刻蚀速率加快;当电极距离分别为20、15、10和5 cm时,垂直晶向刻蚀50μm直线凹槽,所得凹槽实际宽度分别为100、85、70和60μm,其晶向影响受到明显抑制,横向钻蚀大幅减小。研究结果说明,通过电极距离调节这一简单方式,有可能解决激光电化学刻蚀速度慢、横向钻蚀严重等难题。
The influence of pole distance on laser electrochemistry etching velodty and traverse etching is studied. Experimental results showe that when pole distances change from 15 cm to 5 cm,the loop circuit adds about 15.4% and the time of the equal chemistry heat creation shorten 2/3 at least,it shows that shortening the pole distance can the laser electrochemistry etching rate when pole distance is 20,15,10 and 5 cm respectively, the practice groove width is 100,85,70 and 60μm, it shows, the influence of crystal-orientation can be restrained and traverse etching is reduced greatly. The above results show that ths possible to solve the difficult problem of laser electrochemical etching include traverse and rate by modulation of polar distance.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2007年第10期1208-1211,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60277008)
教育部重点资助项目(03147)
电科院及四川省科技厅资助项目(04GG021-020-01)
国防科技重点实验室基金资助项目(514910501005DZ0201)
关键词
激光电化学腐蚀
光电子
半导体化合物
刻蚀速率
横向腐蚀
laser electrochemistry etching
optical electronic
semiconductor compound
etching rate
traversal etching
