摘要
利用等离子体刻蚀理论和实验相结合的方法,实现了离子刻蚀无驱动结构硅微机械陀螺芯片技术。实验表明:离子刻蚀55μm硅的均匀性U=0.63%,选择比P=90∶1,刻蚀速率V=7.25μm/min,侧壁垂直度为90°±1°。应用该技术刻蚀出的芯片表面平整、光滑,解决了湿法刻蚀难以解决的横向腐蚀问题,并提高了刻蚀速率。
By combining the theory and experiment of plasma etching, ion etching technology of non-drive MEMS gyroscope of silicon chip has been studied. Experiments show that： the uniformity of etching depth of 55 μm silicon is 0. 63%. Selection ratio is 90： 1. The etching rate is 7.25 μm/min. The verticality is 90°± 1 °. By applying this technology, the etched chip is fiat and smooth, which has solved the difficulty of lateral corrosion for wet etching and improved the etching rate.
出处
《北京信息科技大学学报（自然科学版）》
2015年第3期26-29,共4页
Journal of Beijing Information Science and Technology University
基金
国家自然科学基金资助项目(61372016)
北京市自然科学基金重点项目(KZ201511232034)
北京市教育委员会科技计划资助项目(KM201411232021)
北京市传感器重点实验室开放课题资助项目(2015XXX)
