摘要
本文报道了基于国产外延材料的SiC基Al GaN/GaN高迁移率晶体管(HEMT)器件的研制,外延材料利用金属有机物化学气相淀积技术(MOCVD)生长,器件栅长0.8μm,输出电流密度达到0.94A/mm,在5.4GHz下,单指型管芯获得了3.1W/mm的连续波测试功率,与蓝宝石衬底的器件相比,由于自热效应的有效改善,输出功率能力大大提高.
This article reported on the AlGaN/GaN HEMT device fabrication based on native epitaxy material, which is grown by MOCVD on SiC wafter. The device gate is 0. 8μm, the maximum current density is 0. 94 A/mm. At the frequency of 5. 4 GHz, the maximum power density of single finger device is 3. 1 W/mm, under the continue wave condition. Due to the alleviated self-thermal effect, the device power ability has been improved a lot compared to that based on sapphire.
出处
《电子器件》
CAS
2007年第3期738-740,共3页
Chinese Journal of Electron Devices
基金
国家973计划"新一代化合物半导体电子器件与电路研究"资助项目(2002CB311903)
中国科学院创新资助项目(KGCX2-SW-107)
