摘要
功率MOSFET参数测试仪是用来测试功率MOSFET电特性参数的仪器设备(如阈值电压、跨导等)。以单片机为核心,介绍功率MOSFET参数测试仪的原理、设计及实现,设计了电特性参数测试的具体电路,编写了测试控制程序,通过对设计出的测试仪系统进行实验和调试,可以准确测量功率MOSFET的阈值电压、跨导、栅源漏电流、零栅压漏极电流及耐压。
Measuring power MOSFET parameter instrument is designed to measure the most parameters of Power MOSFET （such as threshold voltage, forward transconductance and so on）. This paper focuses on some measuring methods and the realization of hardware design. The Parameter Measuring system of Power MOSFET is designed based on a single chip. With the help of the controlling programs added to the system and the work of some hardware experiments and software debugging, the designed system can measure threshold voltage, forward transconductance, gate-source leakage turret, drain current with Vgs=0 , the breakdown voltage between drain and sourse successfully.
出处
《电子器件》
EI
CAS
2006年第4期1058-1060,共3页
Chinese Journal of Electron Devices
关键词
功率
MOSFET
测试仪
power
MOSFET
instrument for measuring parameters
