摘要
通过非平衡磁溅射方法和改变衬底温度，在单晶Si（001）衬底上制备氯化碳薄膜材料．实验结果表明，氮化碳薄膜的沉积率、氮原子质量分数皆与衬底温度有关，薄膜中的氮原子与处于sp2和sp3杂化状态的碳原子相结合．随着衬底温度的改变，氮原子与处于这两种状态的碳原子结合的比例也发生改变．
Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputteringat different substrate temperatures.It has been found that the deposition rate and nitrogen content aredependent on the substrate temperature.From XPS analysis, it has also been found that the N atomsin the films are bound to both sp2- and sp3-hybridized C atoms, which is also dependent on substratetemperature.
出处
《吉林大学自然科学学报》
CAS
CSCD
1997年第1期63-65,共3页
Acta Scientiarum Naturalium Universitatis Jilinensis
关键词
氮化碳
薄膜
衬底温度
生长
磁溅射
carbon nitride, thin film, substrate temperature, XPS
