摘要
采用非平衡磁溅射方法，在不同衬底偏压条件下，在Ｓｉ（００１）衬底上制备出氮化碳薄膜．实验发现，氮化碳薄膜的沉积率取决于衬底偏压．通过对红外、电子能量损失谱的测试分析发现，衬底偏压对氮化碳薄膜中原子间的键合情况也有一定的影响．
Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputtering at different substrate bias. It was found that the deposition rate is dependent on the substrate bias.From FTIR and EELS analyses, it was also found that substrate bias has an effect on chemical binding among atoms in carbon nitride films.
出处
《吉林大学自然科学学报》
CAS
CSCD
1996年第3期45-48,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
