摘要
我们在国际上率先提出将增益耦合型分布反馈式（ＧＣ－ＤＦＢ）半导体激光器作为激光器／调制器单片集成器件的光源．为了简化制作工艺，进一步提出激光器的有源层与调制器波导共用同一组分和同一结构．本文从理论上分析了该新型器件的可行性，优化设计了器件结构．在此基础上，采用金属有机化合物化学汽相外延技术（ＭＯＣＶＤ）在国际上首次研制成功了该种增益耦合型ＤＦＢ激光器／电吸收型调制器单片光子集成器件．器件阈值电流为３５ｍＡ，在—５Ｖ调制电压下消光比达５ｄＢ．静态调制过程中，激射波长与阈值没有变化．
Abstract Monolithic integration of gain-coupled distributed feedback (DFB) semiconductor laser and electroabsorption (EA) modulator is proposed. To simplify the fabrication process, a novel structure is also given, in which active layer of laser and guiding layer of EA modulator is the same. Operation principle of such devices is discussed by theoretical analysis. Device structural parameters, such as grating period and thickness of absorption layer are designed. The novel integrated device based on GaAlAs/GaAs materials is fabricated by using MOCVD for the first time. A low threshold current of 35mA, and a modulation depth of 5 dB at the bias of ----5V are obtained. No wavelength shift and threshold current change are observed during static modulation.
基金
国家教委回国人员科研启动基金
国家自然科学基金
优秀中青年人才专项基金
国家教委跨世纪人才基金
