摘要
本文报道了一种含新型载流子注入光栅的１．５５μｍＩｎＧａＡｓＰ／ＩｎＰ应变多量子阱分布反馈（ＤＦＢ）激光器．我们对该器件的掺杂与结构进行了优化，增强了载流子阻挡光栅的作用，得到了很强的增益耦合．利用ＬＰＥ和ＭＯＣＶＤ混合生长，在器件端面无镀膜的条件下获得了很高的单模成品率．
Abstract A 1 55μm
InGaAsP/InP strained multiquantum well (MQW) distribute feedback (DFB) laser with a
periodically modulated injection carrier is described. In this laser structure, a current blocking
grating is improved by using optimized doping for large pure gain coupling. The device is
fabricated by hybrid growth of MOVPE and LPE. High single mode oscillation yield is achieved
under the condition of cleaved facets.
基金
自然科学基金杰出青年基金
"863"计划
