摘要
硒化镉晶体是一种很有前途的室温核辐射探测器半导体材料，实验采用改进的双温区气相垂直提拉法成功的生长了φ15mm×40mm，电阻率为10^7～10^8（Ω·cm）量级的硒化镉单晶体。对生长的硒化镉单晶体（110）解理晶片进行XRD、红外透过测试，结果显示：硒化镉单晶体完整性好，红外透过率〉62％，表明用二步提纯，在具有较好温度梯度的双温区炉中生长晶体，能有效地控制杂质、缺陷浓度和晶体的化学配比。
CdSe crystal was a very promising semiconductor material as room-temperature nuclear radiation detectors, In the experiment, by innovated perpendicular vapor phase pull method in a two-zone furnace, size of φ15mm×40mm and receptivity of 10^7-10^8Ω · cm CdSe large single crystals were grown. The CdSe single crystal （110） cleavage plane was tested by XRD and IR. The results showed that perfection of the crystal is good, IR transmission is larger 62%, what is more, two-step purification, and the two-zone furnace has better temperature gradient, can effectively control impurity, defection concentration and chemical ratio of the crystal in the growth process.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2006年第11期1746-1748,共3页
Journal of Functional Materials
基金
国家高技术研究发展计划(863计划)资助项目(2002AA325030)
关键词
硒化镉
晶体生长
气相垂直提拉
电阻率
红外表征
CdSe
crystals growth
perpendicular vapor phase pull
resistivity
IR characterization
