摘要
采用改进的双温区水平籽晶气相升华法,生长出尺寸为15 mm×35 mm的完整Cd Se单晶体。经X射线衍射仪、能谱分析仪和傅里叶红外光谱仪的检测,Cd Se单晶粉末衍射谱与标准衍射峰吻合较好,单晶摇摆曲线半高宽0.5°;Cd、Se化学计量比等于1∶0.977,接近理想比;晶体在2.5~20.0μm红外波段范围内的透过率T>65%,吸收系数α<0.1 cm-1。这些结果表明,采用本方法生长的晶体结晶性较好、成分均匀、透过率较高,品质良好,这对生长类似高蒸气压、高熔点的III-V、II-VI族晶体,会有所帮助。
The Cd Se single crystal with 15 mm × 35 mm size was grown by the modified doubletemperature zones horizontal vapor phase method with seed aided technique. The grown Cd Se singlecrystalline ingot is compact and integrated,and its surface is smooth. The obtained Cd Se crystal samples were characterized by X-Ray diffractionmeter（XRD）,energy dispersive spectrometer（EDS）,and fourier infrared spectrometer. The XRD spectrum of Cd Se is agreement with the standard diffraction peaks. The rocking curves of Cd Se single crystal sample possess high intensity and good symmetry,and the full width at half maximum（FWHM） of the rocking curves is 0. 5°. The stoichiometry ratio was tested by EDS to be Cd∶ Se = 1∶ 0. 977,close to the ideal ratio of 1∶ 1. The infrared transmission is beyond 65% in the region from 2. 5 to 20 μm,and the absorption coefficient α is less than 0. 1 cm^-1. The above results show that the as-grown Cd Se crystal has good quality.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2017年第1期33-37,共5页
Journal of Synthetic Crystals
基金
中国科学院创新基金(CXJJ)
关键词
气相升华法
晶体生长
CdSe晶体
性能检测
vapor phase sublimation method
crystal growth
CdSe crystal
property characterization
