摘要
通过变温(20～300K)霍尔效应测量,研究了CdSe单晶体的电阻率ρ(T)、载流子浓度n(T)、霍尔系数RH(T)和霍尔迁移率μH(T)的温度依赖关系.实验结果表明CdSe单晶体的导电类型总为n型,且它的电阻率与载流子浓度的温度依赖关系与n-Si单晶类似.通过拟合禁带宽度约为1.7eV.本文还进一步研究了本征区、饱和区、弱电离区内电子浓度的变化和霍尔因子γ随温度变化关系,并由此计算出杂质电离能(24.7meV)与补偿度(23.7%).上述结果表明CdSe单晶体具有优良的电学特性,是制作室温核辐射探测器的理想材料.
The Hall measurements were carried out to characterize the CdSe single crystal in varying temperatures from 20-300K. It showed the temperature dependence of the resistivity, the carrier concentration, the Hall coefficient and the Hall mobility of the CdSe single crystal. The experimental results indicated that the CdSe single crystals grown in our laboratory are always n-type compound semiconductor with a hexagonal sys- tem and the band gap about 1.7eV at the room temperatures. It found that there was a similar relationship between the temperature dependence of the resistivity and the charge carrier concentration with n-type Si single crystal. It discussed further the changes of the electrons within the intrinsic, saturated and weak ionized zones of the crystal, and the relationship of the Hall factor, γ with the temperature was reported as well. It was also obtained energies of ionization for the impurities （24.7meV） and the degree for the compensation （23.7%）. Based on the results of the Hall measurements, it concluded that CdSe single crystal with a good electrical quality was a promising material for room temperature nuclear radiation detectors.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2005年第10期1538-1541,共4页
Journal of Functional Materials
基金
国家高技术研究发展计划(863计划)资助项目(2002AA325030)
