摘要
采用Mo/钠钙玻璃衬底作为阴极,饱和甘汞电极(SCE)为参比电极,大面积的铂网电极作为阳极的三电极体系,以氯化铜,三氯化铟,三氯化镓和亚硒酸的水溶液为电解液,利用电沉积技术制备出黄铜矿结构Cu(In,Ga)Se2多晶薄膜。研究了不同热处理温度对C IGS多晶薄膜材料的组成、结构和表面形貌的影响以及薄膜的光电学性能。实验结果表明当热处理温度为450℃时,所制备的Cu(In,Ga)Se2薄膜的化学组成接近理想的化学计量比,薄膜具有黄铜矿结构,颗粒均匀,致密性较好,在室温下禁带宽度为1.43 eV,具有高的吸收系数。
Cu （In, Ga）Se2 （CIGS） thin films were electrodeposited on Mo-coated soda lime glass substrate using a conventional three-electrode assembly, where the reference electrode was a saturated calomel electrode （SCE） , the,anode electrode was Pt mesh and the cathode electrode was a Mo/soda lime glass substrate. The chemical bath for co-electrodeposition was prepared from copper chloride, indium chloride, gallium chlorideand and selenous acid. The effect of selenized annealing temperature of the CIGS films on the microstructure and electric properties has been investigated. The microstructure and morphology of the selenized CIGS thin films were investigated by X-ray diffraction （XRD）and scanning electron microscopy （SEM）. The composition and electrical properties of the selenized CIGS thin films were characterized by energy dispersive spectroscopy （ EDS ） and HLHL5500 Hall system, respectively. The results indicated higher annealing temperature improves the crystallinity of the chalcopyrite phase and Cu（In, Ga）Se2 thin films have chalcopyrite structure and uniform grain size, Eg of 1.43eV and high absorption coefficient when the annealing temperature is 450℃.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第5期1146-1150,共5页
Journal of Synthetic Crystals
基金
武汉理工大学校基金(2003XJJ025)
