摘要
以共溅射法制备的Cu-In预制膜为衬底材料,以硒粉为原料,尝试了几种特殊的硒化方案,包括单源硒化法、双源硒化法、表面喷粉硒化法、分步硒化退火和同步硒化退火等5种具有代表性和创新性的方案,研究了硒源的摆放方式、升温方法对薄膜质量的影响,比较了不同方法制备的CuInSe2(CIS)薄膜在形貌、成分、相结构等方面的异同.系统地分析了硒化温度、退火温度和退火时间对CuInSe2薄膜成分的影响,研究了各元素的百分含量随硒化退火条件的变化规律,为更准确地把握CIS薄膜的成分和相结构提供有益的借鉴.
Co-sputtered Cu-In precursors were used as the backing materials, and selenium powder was employed as the raw materials. Five kinds of representative or innovative selenization schemes, including single selenium source, double selenium source, powder spraying, selenizing and annealing step by step or simultaneously, were applied to grow CuInSe2 （CIS） thin films. The influence of selenium source location and temperature rising methods on the property of CIS films was evaluated. The similarities and differences in the morphology, composition and phase structure among different methods were compared. The relationship between selenization temperature, anneal temperature, anneal time and the composition of CIS thin films was researched. The rules how element percent alters with the selenization and anneal condition are established, which can provide a reference to better control the composition and phase structure of CIS thin films.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第1期574-582,共9页
Acta Physica Sinica
基金
北京科技大学'422高层次创新人才工程'(批准号:00007411)资助的课题
关键词
Cu-In预置膜
共溅射
硒化
CIS膜
Cu-In precursor, co-sputtering, selenization, CIS thin films
