摘要
报道了热处理对电沉积ＣｕＩｎＳｅ２薄膜的表观形貌、结构及光电性质的影响。
CuInSe2 thin films were prepared by electrodeposition technique, The effects of annealing on the composition,morphology,and structure change of the films were discussed. The optimum annealing temperature was obtained on the basis of photoelectrochemical char-acterization of the samples.
出处
《应用化学》
CAS
CSCD
北大核心
1994年第1期102-104,共3页
Chinese Journal of Applied Chemistry
基金
国家自然科学基金及厦门大学固体表面物理化学国家重点实验室资助课题
关键词
CUINSE2
薄膜
热处理
电沉积
CuInSe2.thin film,annealing,photoelectrical conversion material
