摘要
在半导体制造工艺的湿法刻蚀中,用热磷酸刻蚀氮化硅和氮氧化硅是其中一个相对复杂又难以控制的工艺。在这个工艺中,热磷酸刻蚀后的去离子水(DIW)清洗更是一个非常重要的步骤。主要分析了由于去离子水清洗不当造成的表面缺陷的形成机理,并通过合理的实验设计和分析,给出了具体的解决方案。
In the processes of wet etching, SiN/SiON etching in hot phosphoric acid is very complicated and hard to control, and the DIW cleaning post hot phosphoric acid etching is also very important. The mechanisms of surface defects caused by improper DIW cleaning were analyzed, and the solutions for reducing the surface defects are provided by means of the proper experimental design and analyses.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第9期650-652,共3页
Semiconductor Technology
关键词
半导体制造
氮化硅
湿法刻蚀
湿法清洗
缺陷
semiconductor manufacturing
silicon nitride
wet etching
wet cleaning
defect
