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适合于改善金属接触孔清洗的单晶圆工艺(英文)

Single-wafer Process for Improved Metal Contact Hole Cleaning
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摘要 在半导体制造流程中,晶圆清洗正在成为一种更加关键的工序模块。因为集成度的提高,需制定适合于清洗机及更高器件结构均匀性的要求。清洗的有效性最终会影响器件的性能和成品率[1-4]。无论在生产线前端或后端清洗工艺中,正在受到越来越仔细检查。在金属化工艺之前,一个有意义的方面是刻蚀和灰化后期金属接触孔侧壁和底部残留物的清除。因其会导致器件失效,一种不完全接触孔清洗技术成为一种主要的业务。 Wafer cleaning is becoming an increasingly critical process module in the semiconductor manufacturing flow. As the requirements for integration precision grow, so too do the needs for cleaner and more uniform device structures. The effectiveness of cleans ultimately influences device performance and yield . All aspects of cleans processing are being increasingly scrutinized whether in frontend or backend-of-line (BEOL) processing. One area of concern is post-etch and ash residue removal from the sidewalls and bottoms of metal contact holes prior to metallization. An incomplete contact clean is a major concern as it can lead to costly device failures.
机构地区 SEZ Korea Ltd.
出处 《电子工业专用设备》 2007年第6期12-15,30,共5页 Equipment for Electronic Products Manufacturing
关键词 单晶圆清洗 抗蚀剂除胶 刻蚀后清洗 金属接触孔 成品率 Single-wafer cleaning Resist Strip Metal Contact Holes Yield
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参考文献4

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