摘要
在系统细致分析RTD材料结构参数与器件特性参数关系的基础上,确立了RTD材料结构的设计原则和设计方法,并对以SI-GaAs为衬底的RTD分子束外延(MBE)材料生长结构进行了设计。所研制出的RTD参数实测结果证实了此设计方法是正确的。
Based on the systematic and detailed analysis on the correlation between material structure parameters and device characteristic parameters, the design principle and design method on RTD material structure were established. And the MBE material structure on RTD for SI-GaAs substrate was designed by this design method. It demonstrated that the design method was correct by the measured results from the fabricated RTD parameters.
出处
《微纳电子技术》
CAS
2006年第8期361-365,392,共6页
Micronanoelectronic Technology
