摘要
优化设计了GaAs／InGaAs／A1As双势垒异质结构，采用台面工艺实现了RTD的器件制备，在3～350K温度范围内对器件的直流特性进行了测试分析。实验结果表明，受热电子发射电流的影响，当测试温度T〉77K时，GaAs基RTD的直流特性参数随温度变化显著；而当T％77K后，器件直流特性趋于饱和。基于实验数据外推的最高工作温度和极限负阻温度分别为370K和475K。
A GaAs-based resonant tunneling structure with A1As/InGaAs double-barrier was optimally designed, and RTDs were fabricated by using conventional wet mesa etching process. The DC characteristics of GaAs-based RTDs at different temperatures were measured by Physical Property Measurement System （PPMS） from Quantum Design and Keithley 2611 sourcemeter. The experimental results indicated that the DC parameters of RTDs varied significantly when the device temperatures exceeded 77 K. However, the device performance tended to saturate at tem- peratures lower than 77 K. Additionally, the maximal operating temperature and the limit tem- perature for negative differential resistance extrapolated from the experimental results were 370 K and 475 K respectively, indicating the designed RTDs have applicable thermal performance.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2013年第5期428-431,478,共5页
Research & Progress of SSE
基金
国家自然科学基金资助项目(61106052)
天津市基础研究重点资助项目(10JCZDJC15600)
关键词
共振隧穿二极管
量子效应
砷化镓
负微分电阻
温度特性
resonant tunneling diode
quantum effect
gallium arsenide
negative differentialresistance
temperature characteristics
