摘要
采用溶胶-凝胶法制备了ZnO:Al(AZO)透明导电薄膜．通过X射线衍射(XRD)、紫外-可见分光光度计 (UV-Vis)、扫描电镜(SEM)和电阻测量装置,考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响．结果表明,退火温度越高,多晶AZO薄膜的(001)晶面择优取向生长的趋势越强,并且随退火温度升高,薄膜的晶粒尺寸增大,透光率增加．薄膜晶体结构为纯ZnO的六角纤锌矿结构．在掺杂浓度1％(摩尔分数)、退火温度500℃及镀膜层数10的条件下,得到了电阻率为3．2×10-3Ω·cm、可见光区的平均透射率超过90％的AZO薄膜．
Aluminium doped zinc oxide （AZO） polycrystalline thin films were prepared on optical glass substrates by sol-gel dip-coating process. The effects of aluminium concentration, deposited layear number and annealing temperature on the microstructure, optical and electrical properties of the films were investigated by X-ray diffraction （XRD）, spectrophotometric analysis （UV-Vis）, scanning electron microscopy （SEM） and electrical resistance measurement. The results showed that with increasing the annealing temperature from 300 to 500 ℃, the film grew more preferentially along the （001） plane of the film, the grain size increased, the transmittance also became higher and the electrical resistivity decreased. X-ray diffraction analysis revealed the film consists of single-phase ZnO with hexagonal wurtzite structure. Average optical transmittance of the film is more than 90% in the visible light region and electrical resistivity is as low as 3.2 × 10^-3 Ω·cm under doping concentration 1% （mole fraction）, annealing temperature 500 ℃ and deposition layers 10.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第5期505-510,共6页
Acta Metallurgica Sinica
基金
国家自然科学基金资助项目 20306031
