摘要
以In金属和SnCl4·5H2 O作为原材料 ,采用溶胶一凝胶法在玻璃基体上制备了高质量的ITO薄膜 ,并分析了Sn掺杂时、热处理温度、热处理时间三种工艺参数对ITO薄膜电学性能的影响 。
High quality ITO films were deposited on glass substrates by sol-gel method in the solution composed of indium metal(In) and stannic chloride (SnCl 4·5H 2O). The influences of Sn diffusion,heat-treatment temperature and time on electrical properties of ITO films were studied.The phase composition of ITO films was determined.
出处
《广东技术师范学院学报》
2004年第4期72-74,共3页
Journal of Guangdong Polytechnic Normal University
