期刊文献+

厚度对掺铝氧化锌透明导电薄膜性质的影响 被引量:3

Effects of Thickness on Properties of Al-doped ZnO Transparent and Conducting Thin films
下载PDF
导出
摘要 采用紫外光助溶胶-凝胶法在玻璃基底上制备了掺铝氧化锌薄膜。研究了厚度对薄膜性质的影响,结果表明:所有薄膜均由具有c轴优先生长取向的六角纤锌矿结构的ZnO晶体构成,晶体的粒径随厚度的增加而先增大,达到最大值后,不再随厚度的增加而改变;薄膜的方阻随厚度的增加先减小,在达到最小值2.1×102Ω/□后,随厚度的增加又略有增大;而所有薄膜均是透明的,在可见光区的透光率>80%。 Transparent and conducting Al-doped ZnO thin films were prepared on glass substrates by the UV light-assisted sol-gel method. Effects of thickness on properties of the thin films were further studied. The results show that alt the films are constituted by hexagonal wurtzite crystals with the c-axis preferred orientation, and the crystal size firstly increases with the increase of film thickness, but when the crystal size amounts to the maximum, it will never change with the increase of film thickness; the sheet resistivity of films firstly decreases with the increase of film thickness, but when the sheet resistivity amounts to the minimum, 2.1×10^2Ω, it will increase gradually with the increase of film thickness; all the films are transparent, and transmittance of the film is over 80% within the visible wavelength region.
出处 《辽宁化工》 CAS 2011年第12期1226-1229,共4页 Liaoning Chemical Industry
基金 山西农业大学人才引进科研启动基金 项目编号:XB2010006
关键词 厚度 掺铝氧化锌 透明导电 薄膜 Thickness Al-doped ZnO Transparent and conducting Thin film
  • 相关文献

参考文献16

  • 1Boen Houng, Cheng-Lou Huang, Song-Yuan Tsai. Effect of the pH on the growth and properties of sol-gel derived boron-doped ZnO transparent conducting thin film[J]. Journal of Crystal Growth, 2007, 307:328-333. 被引量:1
  • 2C. Lennon, R.B. Tapia, R. Kodama, et al. Effects of Annealing in a Partially Reducing Atmosphere on Sputtered Al-doped ZnO Thin Films[J]. Journal of Electronic Materials, 2009, 38:1568-1573. 被引量:1
  • 3Sookjoo Kim, Wan In Lee, El-Hang Lee, et al. Dependence of the resistivity and the transmittance of sputterdeposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature[J]. J. Mater. Sci., 2007, 42:4845-4849. 被引量:1
  • 4Ji Bong Park, Se Hun Park, Pung Keun Song. Electrical and structural properties of In-doped ZnO films deposited by RF superimposed DC magnetron sputtering system[J]. J. Phys, Chem. Solids, 2010,71:669-672. 被引量:1
  • 5J.M. Lin, Y.Z. Zhang , Z.Z. Ye, et al. Nb-doped ZnO transparent conducting films fabricated by pulsed laser deposition[J].Appl. Surf. Sci., 2009, 255:6460-6463. 被引量:1
  • 6Ruchika Sharma, Kiran Sehrawat, R.M. Mehra. Epitaxial growth of highly transparent and conducting Sc-doped ZnO films on c-plane sapphire by sol gel process without buffer[J]. Current Applied Physics, 2010, 10:164-170. 被引量:1
  • 7Jeng-Lin Chung, Jyh-Chen Chen , Chung-Jen Tseng.The influence of titanium on the properties of zinc oxide films deposited by radio frequency magnetron sputtering[J]. Appl. Surf. Sei., 2008, 254:2615-2620. 被引量:1
  • 8Zhou Y, Kelly P J, Postill A, et al. The characteristics of aluminium-doped zinc oxide films prepared by pulsed magnetron sputtering from powder targets[J]. Thin Solid Films, 2004,447-448:33-39. 被引量:1
  • 9Kim H, Pique A, Horwitz J.S,et al. Effect of aluminum doping on zinc oxide thin fihns grown by pulsed laser deposition for organie light-emitting devices[J]. Thin Solid Films, 2000,377-378: 798-802. 被引量:1
  • 10Keh-moh Lin, Paijay Tsaio Growth mechanism and characterization of ZnO: AI multi-layered thin films by sol- gel technique[J]. Thin Solid Fihns, 2007, 515: 8601-8604. 被引量:1

二级参考文献18

  • 1李琳,季振国,张亚红,韩伟智.氧化锌薄膜紫外光电导机理研究[J].半导体光电,2006,27(1):52-54. 被引量:7
  • 2周宏明,易丹青,余志明,肖来荣,李荐,王斌.溶胶-凝胶法制备的ZnO:Al薄膜的微观结构及光学、电学性能[J].金属学报,2006,42(5):505-510. 被引量:18
  • 3王炜,王波涛,董晓刚,薛钰芝.溶胶-凝胶方法制备ZnO:Al薄膜及其制备工艺条件研究[J].感光科学与光化学,2007,25(1):63-68. 被引量:2
  • 4Zhou Y, Kelly P J, Postill A, et al. The characteristics of aluminium-doped zinc oxide fihns prepared by pulsed magnetron sputtering from powder targets[J ]. Thin Solid Films, 2004, 447-448: 33-39. 被引量:1
  • 5Kim H, Pique A, Horwitz J S, et al. Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-ernitting devices[J ]. Thin Solid Films, 2000,377-378: 798-802. 被引量:1
  • 6Musat V, Teixeira B, Fortunato E, et al. M-doped ZnO thin films by sol-gel method [ J ]. Surface and Coatings Technology, 2004,180-181 : 659-662. 被引量:1
  • 7Lin K M, Tsai P. Growth mechanism and characterization of ZnO: A1 multi-layered thin films by sol-gel technique [J]. Thin Solid Films,2007,515:8601-8604. 被引量:1
  • 8Radhouane B H T. Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol-gel process [J ]. Journal of the European Ceramic Societ, 2005,25 : 3301-3306. 被引量:1
  • 9Mridha S, Basak D. Effect of thickness on the structural, electrical and optical properties of ZnO films[J ]. Materials Research Bulletin, 2007,42 : 875-882. 被引量:1
  • 10Barnes T M, Leaf J, Fry C, et al. Room temperature chemical vapor deposition of c-axis ZnO[ J ]. Journal of Crystal Growth ,2005,274: 412- 417. 被引量:1

共引文献4

同被引文献69

引证文献3

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部