摘要
研究了采用直流磁控溅射法制备ITO透明导电膜时温度、靶材、氧压比、溅射气压、溅射速率等工艺条件对ITO膜电阻率和可见光透过率等光电特性的影响。实验结果表明,用ITO陶瓷靶溅射镀膜要比In-Sn合金靶好,特别是在电阻率上,前者要低一个数量级左右;并由实验结果得到,当温度330℃,氧氩比1/40,溅射气压0.45 Pa和溅射速率23 nm.min-1左右时,可获得薄膜电阻率1.8×10-4Ω.cm,可见光透过率80%以上的最佳光电特性参数。
The influence of technological factors on electrical and optical properties of ITO transparent conductive films prepared by DC magnetron sput-tering method was researched. These technological factors consist of the temperature, the target, theratio O2/ Ar, the sputtering pressure and the sputtering speed. The experimental results show that ITO target is better than In-Sn target （specially in resistivity）, and when the temperature 330 ℃, the O2/Ar ratio 1/40, the sputtering pressure about 0.45 Pa, the sputtering speed about 23 nm·min^-1. The perfect electrical and optical parameters of the thin films with resistivity 1.8 × 10^-4 Ω·cm and visible light transmissivity beyond 80% are obtained.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2005年第6期931-933,共3页
Chinese Journal of Rare Metals
基金
河南省科技攻关项目(0224380029)
关键词
磁控溅射
ITO膜
电阻率
透光率
magnetron sputtering
ITO film
resistivity
transmissivity
