摘要
在实验室条件下对P型单晶硅片进行阳极电化学腐蚀制成多孔硅(PorousSilicon)样片,同时用适当配比的HNO3对多孔硅进行处理。比较了HNO3作用前后样片的光致发光(PL)谱,结果发现用HNO3处理的多孔硅的发光效率有显著提高。用XPS和SEM对样片测试的结果表明:酸处理后样片表面形成Si—O结构,其表面平均孔径增大,而且分布更均匀。
PS samples used in this work were made with P -silicon by anodization method under experimental condition. Then we used HNO3 to operate PS samples. The results of photoluminescence properties showed that the photoluminescence intensity of those PS samples that were treated by HNO3 had a significant improvement. In addition, we carried out XPS and SEM experiments and found that the PS treated by HNO3 occurred a kind of structure of Si—O, and the treated samples had a better distribution of holes.
出处
《江西科学》
2005年第4期363-365,382,共4页
Jiangxi Science
基金
江西省自然基金项目(0312006)。
关键词
多孔硅
光致发光
HNO3
Porous silicon, Photoluminescence, HNO3
