摘要
通过改变电化学腐蚀生成多孔硅膜的工艺条件,研究它的发光峰形状的变化.从实验上观测到多孔硅膜的针形发光激发谱和发射光谱,其半峰全宽均小于3.8nm.声空化所引发的特殊物理、化学环境为制备高效发光的多孔硅提供了一条重要途径.实验结果表明,声空化处理对于改善多孔硅的微结构,提高发光效率和发光稳定性都是一项非常有效的技术.
The variation of photoluminescence emission（PLE） and photoluminescence（PL） peak-shape of porous silicon（PS） film with the electrochemical conditions to form PS film have been investigated. We have observed exporimentally at first needle PLE and PL peaks with full width at half maximum（FWHM） less than 3.8nm. The special physicochemical environment caused sonic-vacating provides an important outlet for the preparation of highly efficient luminescent PS films. Experimental resulta show that sonicchemical treatment is an effective technology for the improvement of the microstructure of PS , and the luminescent efficiency and stability thereof. Luminescent PS films, prepared by ultrasonic-enhanced anode electrochemical etching, display better qualities than the samples prepared by conventional methods wide- ly used at present. This ultrasonic-chemical effect roota in sonic-vacating, i.e. the generation ,formation and rapid collapse of bubbles in the etching solution.
出处
《长沙电力学院学报（自然科学版）》
2006年第3期77-80,共4页
JOurnal of Changsha University of electric Power:Natural Science
基金
湖南省自然科学基金资助项目(04JJ3030)
湖南省教育厅青年科学基金资助项目(03B006)
关键词
多孔硅膜
超声波
光致发光
porous silicon film
ultrasonic
photoluminescence
