摘要
研究不同类型、不同沟道长度的ｎ沟金属－氧化物－半导体场效应晶体管（ＭＯＳＦＥＴ）在不同栅电压下工作时栅氧化层的击穿特性。结果表明，ＭＯＳＦＥＴ栅氧化层的加速击穿起因于沟道大电流，而栅氧化层进行快速热氮化可极大地改善其栅氧化层的击穿特性。
This work extensively examines gate-oxide breakdown behaviors of n-MOSFET's including both enhancement-type and depletion-type devices with various channel lengths under different operating conditions. The results indicate that the accelerated gateoxide breakdown in MOSFET's is initiated by large channel current. The situation can be greatly improved by rapid thermal nitridation of the gate oxide in the transistors.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1995年第12期89-94,共6页
Journal of South China University of Technology(Natural Science Edition)
