摘要
利用非平衡磁控溅射技术、扫描电子显微镜、X射线衍射仪和质谱仪等仪器研究了不同靶材、基体电流密度、靶电源特性和基体偏压等条件下二硫化钼薄膜的表面形貌、结构和生长特性。试验结果表明,在低密度冷压靶材、低电流密度、直流双脉冲电源和负偏压下,MoS2薄膜倾向按(002)平行于基体表面的层状方式生长;而在高密度热压靶材、高电流密度、单一直流脉冲电源和正偏压条件下,薄膜将以(002)基面与(100)、(110)棱面联合或以棱面为主的方式进行生长。沉积条件对MoS2薄膜生长特性的影响,是通过改变沉积速率和沉积粒子的能量而实现的。
MoS2 coatings were prepared by unbalanced bipolar pulsed DC magnetron sputtering apparatus under different targets, current densities, power modes and bias voltages. The morphology, structure and growth characteristics of MoS2 coatings were observed and measured respectively by scanning electron microscopy, X-ray diffraction and mass spectrometer. The results show that MoS2 coatings tend to be formed with the(002) basal plane parallel to the surface at the conditions of cold pressed target with low density, low current density, bipolar pulse DC power and minus bias voltage, whereas the coatings deposited under the hot pressed target, higher current density, simple DC power and positive bias voltage have the(002) basal plane perpendicular to the surface. The influence of deposition conditions on the growth characteristics of MoS2 coatings are fulfilled by altering their growth rate and the energy of sputtered particles.
出处
《兵器材料科学与工程》
CAS
CSCD
北大核心
2005年第4期34-38,共5页
Ordnance Material Science and Engineering
基金
教育部留学回国人员科研启动基金资助项目(413175)
关键词
沉积工艺
二硫化钼
薄膜
生长规律
deposition condition
molybdenum disulfide
coating
growth mechanism
