摘要
介绍了几类常见的基于AlGaN/GaNHEMT的微波功率放大器;论述了制造微波功率放大器的两种关键工艺技术———倒装芯片集成(FCIC)和共平面线(CPW);分析了自行研制的微波功率放大器核心器件AlGaN/GaNHEMT的性能。
Several commonly used microwave power amplifiers based on AlGaN/GaN high electron mobility transistors (HEMT's) are described. Two major processing tecnologies for microwave power amplifiers,flip-chip IC (FC-IC) and coplanar wire (CPW), are introduced. And finally, AlGaN/GaN HEMT's, the core devie for power amplifiers, are developed, and their characteristics are analyzed.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第3期245-247,共3页
Microelectronics
基金
国家重大基础研究发展(973)计划资助项目(2002CB311904)
国防预先研究项目
