3WANG X L,WANG C M,HUG X,et al.MOCVD grown high mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate[J].J of Crystal Growth,2007,298:791-793. 被引量：1
4SAITO W,KURAGUCHI M,TAKADA Y,et al.Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R on A-VB tradeoff characteristics[J].IEEE Trans on ED,2005,52(1):106-111. 被引量：1
5ZHANG N Q,KELLER S,PARISH G,et al.High breakdown AlGaN/GaN HEMT with overlapping gate structure[J].IEEE EDL,2000,21 (9):421-423. 被引量：1
6KARMALKAR S,MISHRA U K.Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate[J].IEEE Trans on ED,2001,48(8):1515-1519. 被引量：1
7SAITO W,NITTA T,KAKIUCHI Y,et al.Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized fiele-plate structure[J].IEEE Trans.Electron Devices,2007,54(8):1825-1830. 被引量：1
8DORA Y,CHAKRABORTY A,MCCARTHY L,et al.High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates[J].IEEE ED Lett.2006,27 (9):713-715. 被引量：1
9SAITO W,NITTA T,KAKIUCHI Y,et al.A 120 W boost converter operation using a high-volta ge GaN-HEMT[J].IEEE EDL,2008,29(1):8-9. 被引量：1
10Frayssinet E,Knap W,Lorenzini P,et al.High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substractes[J].Appl Phys Lett,2000,77(16):2 551-2 553. 被引量：1
