摘要
介绍了近期文献中对紫外光照下半导体金属氧化物薄膜气敏特性的研究结果:紫外光照引起SnO2,In2O3,ZnO薄膜电导显著增大;提高室温下薄膜对CO,NO2气体检测的灵敏度,减少响应和恢复时间;介绍了一种对紫外光增强气敏机制的物理模型分析方法。最后讨论了当前存在的难点问题(室温下气体检测的灵敏度不高及使用紫外光源不便)及未来研究方向(借改变薄膜的制备方法、工艺条件、优化金属氧化物薄膜的结构;通过掺杂复合改变薄膜的成分以及寻找禁带宽度窄的半导体材料等)。
Reported were recent researches on gas-sensing properties of metal oxide thin films when irradiated by UV light: Experimental results revealed that the conductivities of SnO2, In2O3, ZnO thin films were improved evidently under UV irradiation, and at room temperature the sensitivities of the films to detect CO, NO2 were improved while the response and recovery time were shortened. A possible physical model to explain the mechanism is reported. Current difficulties and future research directions are also discussed.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2005年第7期65-68,共4页
Electronic Components And Materials
基金
国家自然科学基金资助项目(50372040)
