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InGaN蓝光LED的发射光谱、色品质与正向电流的关系 被引量:17

Driving Current Dependence of Emission Spectra and Spectro-color Characteristics of InGaN Based LEDs
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摘要 测量了InGaN蓝色发光二极管 (LED)在不同正向电流IF 驱动下的发射光谱、色品坐标、光通量、光效等性质的变化。探讨了它们与IF 的依赖关系。结果表明 ,发射光谱和峰值波长λp 随电流IF 从 5mA~ 2 0mA增加 ,发生蓝移 ,当IF 大于 2 5mA直到 5 0mA后 ,λp 又逐渐红移 ,光谱的半高宽 (FWHM)和色坐标x和y值也发生变化 ,光通量呈亚线性增加 ,而光效下降。解析随IF 增加 ,影响蓝光LED性能的因素是多方面的。此外 ,还发现EL光谱中有弱的紫外光辐射。 The emission spectra,chromaticity coordinates,luminous flux and luminous efficacy of the InGaN\|based blue LEDs have been measured.The results indicated that as driving current incredses range from 5mA to 20mA,the spectrum morphologies and the peak wavelength λ p have slightly shifted toward short\|wavelength(blue\|shift) and luminous flux has enhanced due to radiation recombination of the D\|A pairs localized energy state in the InGaN well layer.When continuativly increasing forward current,a slowly red\|shift of the emitting peak wavelength λ p and reduction of the luminous efficiency have been observed due to the temperature dependence of band\|gap energy.On the other hand,the weak UV radiation peak about 358nm of the blue LEDs under a forward current of 20 mA has also been observed.
出处 《照明工程学报》 2004年第1期14-18,共5页 China Illuminating Engineering Journal
关键词 INGAN 蓝光LED 发射光谱 正向电流 蓝色发光二极管 Blue-LED InGaN emission spectrum chromaticity coordinate
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  • 1方容川编著..固体光谱学[M].合肥:中国科学技术大学出版社,2001:383.
  • 2Rosner S.J.Carr E.C.Ludowise M.J,Girolami G and Erikson H.I,Correlation of cathodo-luminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-Vapor deposition[J].Appl.Phys.Lett.1997 ,70(4):420-422. 被引量:1
  • 3Nakamura S.Mukai T.and Senoh M.Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes.[J].Appl.Phys. Lett.1994,64(13):1687-1689. 被引量:1
  • 4Bando K.Performance and applications of high-brightness InGaN LED in The 8th Intern symposium on the science & Technology of Light sources[A].PP80 89,Greifswald,Germary,1998.8. 被引量:1
  • 5NaKamura S.InGaN-based blue light-emitting diodes and laser diodes[J].J.Crystal Growth,1999,201/202:290-295. 被引量:1
  • 6Mukai T,Yamada M and Nakamura S.Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes[J].J PN.J.Appl.Phys.1998,37:L1358-L1361. 被引量:1
  • 7Su Y.K,chi G.C and Sheu J.K.Optical properties in InGaN/GaN multiple quantum wells and ble LEDs[J].Optical Materials,2000,14(3):205-209. 被引量:1
  • 8Sugahara T,Sato H,Hao M,Naoi Y,Kurai S et.al.Direct evidence that dislocations are non-radiative recombination centers in GaN[J].Jpn.J.Appl.Phys.19 98,37:L398-400. 被引量:1

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