摘要
直流平面磁控溅射法是生产ITO玻璃最常用的工艺,但是常规的固定磁控方法只有20%～25%的靶材利用率。为了尽可能提高靶材利用率,我们在原来的固定磁场基础上进行了偏心轴旋转的平面磁场改造,改造后的靶材利用率达到了60%～70%,经过两年多的运行,证明改造是相当成功的。本文阐述了偏心旋转移动平面磁控的具体方法及应该注意的几个问题。
DC planar magnetron sputtering processe is the most common technology to produce ITO glass, but the capacity utilization of target in the process with conventional fixed magnetron control is only 20% to 25%. To enhance the utilization, the fixed megnetic field was changed into an eccentrically rotated planar magneric field by which the utilization of target can be up to 60% to 70%. After two-year operation, it was proved that the change is very successful. The way to change the magnetic field and some problems that are werth noting are discussed.
出处
《真空》
CAS
北大核心
2005年第3期27-29,共3页
Vacuum
关键词
磁控溅射
利用率
ITO
magnetron sputtering
capacity utilization
ITO
