摘要
制备了膜层质量良好的镁钙微波介质陶瓷(MCT)薄膜.采用高密度等离子体射频溅射法在(110)二氧化硅上沉积了MCT陶瓷薄膜.研究结果表明: 薄膜态MCT陶瓷具有和块状材料相近的微波介电特性,MCT薄膜的介电常数在20左右,品质因子在23 THz左右;溅射气体的氩氧混合体积比会明显影响薄膜膜层质量及其介电特性,氧分压的变化改变了八面体C轴长度,使晶格畸变和八面体向四面体转变;溅射功率和退火工艺温度也会影响薄膜质量.
Prefect magnesian ilmenite (MCT) thin films were prepared on (110) silicon dioxide underlay by using high density plasma radio frequency (RF) sputter. SEM, XRD and XPS analyses show that MCT thin films have the same crystal lattice and microwave dielectric properties of MCT bulk materials. Thin films dielectric parameter is about 20 and MCT quality factor is about 23 THz. The sputter gas volume ratio of argon and oxygen has main effect on the thin film dielectric properties. Annealing temperature and sputter power have a little effect on thin films dielectric properties. The volume ratio of argon and oxygen can change the C axis length of the oxygen octahedron in MCT crystal lattice, and the change of the ratio induces distortion of crystal lattice.
出处
《浙江大学学报（工学版）》
EI
CAS
CSCD
北大核心
2005年第3期449-452,共4页
Journal of Zhejiang University：Engineering Science
基金
国家自然科学基金资助项目(50172042).
关键词
微波介质陶瓷
MCT
介质薄膜
射频溅射
Annealing
Atomic force microscopy
Crystal lattices
Dielectric properties of solids
Scanning electron microscopy
Sputtering
Thin films
X ray diffraction analysis
X ray spectroscopy
