摘要
基于铁电体物理学的基本理论 ,研究了在外加电场中铁电薄膜的电畴结构。研究表明 ,在铁电材料为单轴各向异性薄膜 ,且在铁电薄膜中能够形成电畴的情形下 ,如果外加一定大小的电场 ,同时外加电场的方向与将要形成的电畴的预定极化方向相反的条件下 ,在铁电薄膜中就可以形成圆柱形电畴结构 ,称为电泡。本质上 ,电泡是铁电薄膜中电畴所承受的压缩力与扩张力稳定平衡的结果 ,是电畴的一种稳定结构。至于电泡尺度的大小 ,除了与外加的电场有关外 。
Based on feroelectronics, the electronic domain structure of feroelectronic film has been studied in exterior electronic field. For a feroelectronic film with single axis and anisotropy,if electronic domain structure can be formed in it, then the exterior electronic field which the orientation is opposition to possible polarization of electronic domain structure will make column electronic domain structure, it can be called electronic bubble. Radically, electronic bubble is a result of stabilization of electronic domain structure in feroelectronic film bettwen compression force and dilation force. The size of electronic bubble lies on exterior electronic field and feroelectronics material.
出处
《压电与声光》
CSCD
北大核心
2004年第5期418-420,共3页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目 ( 79970 0 2 5
698740 18)
关键词
铁电物理学
铁电薄膜
电畴
电泡
feroelectronics
feroelectronic film
electronic domain
electronic bubble
