摘要
对小电压下的LDMOS伏安特性线性区进行了分析。为了避免求解复杂的偏微分方程并且得到解析的结果,这里采用了将场区等效为积累层电阻、扩展电阻、体电阻和漏极分布电阻的串联等效电路。根据LDMOS的结构特点分别给出了各个电阻的具体计算方法。最后给出了精确的LDMOS导通电阻表达式。
In this paper we analyze linear region of n-well LDMOS voltage- current characteristic at low voltage.In order to avoid the complex differential equations and get an analytic result,we provide an equivalent series circuit of the drift region,including the resistance of accumulation layer,the distributed resistance,the body resistance and the distributed resistance at drain.The methods for every resistance are given out in details according to the structure of LDMOS.An accurate expression of LDMOS on-resistance is obtained in the end.
出处
《安徽大学学报（自然科学版）》
CAS
北大核心
2005年第2期55-59,共5页
Journal of Anhui University(Natural Science Edition)
基金
国家高级技术研究发展计划(863计划)基金资助项目 (2004AA1Z1060)
安徽省教育厅重点科研基金资助项目(2003kj001zd)
