摘要
作者利用双晶Ｘ射线衍射技术，研究了不同切割速率下硅晶片的切割损伤。实验得出切割速率不影响损伤层的厚度，但影响损伤层内的微观应力，在一定范围内，切割速率越大，损伤层的微观应力越小，并运用Ｖｏｉｇｔ函数分析法，分析了硅晶片切割层的微观应力。
By means of technique of X-ray double crystal diffraction,the different cutting damages of silicon slices have been studied. The experiments show that the cutting rate of silicon is effect the damage stress of silicon slices,but not effect on the damage thickness, In some extent, the more the cuttingrate is,less the damage stress in,Furthermore, this paper has analy sized the damage stress using Voigt function.
出处
《材料科学与工程》
CSCD
1994年第3期33-37,共5页
Materials Science and Engineering
关键词
硅单晶
机械损伤
微观应力
single crystal silicon, mechanical damage, microstress, X-ray diffraction.
