摘要
电子束刻蚀后,通过刻蚀改变了薄膜基片中的分子的重量,并导致希望曝光区域和实际曝光区域不一致,这一现象被称为“邻近效应”。利用SDS-3电子束曝光机完成有关邻近效应的试验。加工过程中加速电压为5～30kV,衬底基片为硅和PMMA,使校正后邻近效应参量η减少30％。给出实际完成基片图。
E-beam irradiation changes the molecular weight of the resist by inducing chemical changes in the film, which leads to the undesired exposure-area and desired area non-uniform. This is commonly called as 'proximity effect'. The proximity effect in the SDS-3 E-beam lithography system is verified by experiments. All exposures are made with 5-30 kV beam accelerating in Si and PMMA resist. After correction parameter η is of low 30% and giving pictures of experiment.
出处
《机械工程学报》
EI
CAS
CSCD
北大核心
2004年第9期67-70,共4页
Journal of Mechanical Engineering
基金
国家自然科学基金(90307003)
山东省教育厅自然科学基金(03B53)资助项目
