摘要
用RF磁控反应共溅射法在Si( 111)衬底上制备出了铽 (Tb)掺杂的ZnO透明导电薄膜。研究了溅射中Tb掺杂量对ZnO薄膜的结构、电学和光学特性的影响。结果表明 ,在最佳沉积条件下我们制备出了具有良好c轴取向 ,电阻率降低到 9.3 4× 10 - 4Ω·cm ,且可见光段 ( 4 0 0～80 0nm)平均透过率大于 80 %的ZnO∶Tb新型透明导电材料。
Tb-doped zinc oxide (ZnO∶Tb) films were prepared by reactive RF magnetron Co-sputtering on Si (111) substrates. The structure and electrical properties of the ZnO∶Tb films were investigated in terms of preparation conditions. It is found that the appropriate Tb content on the target can improve the structure and electrical properties of ZnO films. Under the optimal conditions, the ZnO∶Tb films with highly c-axis orientation, the lowest resistivity (ρ) of 9.34×10^(-4) Ω·cm and the transmittance over 80% at the visible region are prepared.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2004年第3期502-504,共3页
Chinese Journal of Rare Metals
基金
甘肃省自然科学基金 (ZS0 11 A2 5 0 5 0 C)资助项目
关键词
ZNO
RF溅射
透明导电薄膜
ZnO films
RF actively sputtering
transparent conductive films
