摘要
首先分析了辐照条件下MOSFET氧化层及Si/SiO_2界面陷阱电荷和界面态电荷产生的机理。随后介绍了一种低能X射线辐射系统,最后讨论了X射线辐照后nMOSFET阈值电压的变化,结果表明采用X射线辐照对nMOSFET的阈值电压的影响与^(60)Co辐照影响的规律一致。
The mechanism of hole-trapping in oxide and interface state buidup was discussed un-
der irradiation in this paper first, then a low energy X-ray irradiation system was introduced, final-
ly the variety of nMOSFET threshold voltage after X-ray irradiation was studied, It is shown that
the influence on nMOSFET threshold voltage of X-ray is correlated with that of ^(60)Co.
出处
《电子产品可靠性与环境试验》
2004年第3期56-59,共4页
Electronic Product Reliability and Environmental Testing
基金
电子元器件可靠性物理及其应用技术国家重点实验室基金(51433030404DJ4501)
关键词
低能X射线
辐照试验
陷阱电荷
界面态
low energy X-ray
irradiation test
hole-trapping
interface state
