摘要
本文研究了NMOS晶体管低能X射线辐照后氧化物陷阱电荷的产生、界面态的性质及空穴陷阱的退火特性等问题。实验结果表明,电离辐照产生的界面态具有施主性和受主性,而氧化物陷阱电荷引起的电压变化在退火过程中,随外加偏置电场极性的不同,表现出可逆性,它对晶体管阈值电压的变化起着决定性的作用。
The generation of oxide trapped charge, the property of interface state and the annealing behaviour of hole tiap for low-energy X-ray irradiated nMOS transistors are investigated in this paper. Experimental results show that interface states caused by ionizing radiation have the natures^ of both the donor and acceptor, while the voltage variation caused by oxide tapped charge, depending on different polarity of biased electric field, exhibits invertibility during annealing, which plays a desicive role in the variation in threshold voltage of a transistor.
出处
《微电子学》
CAS
CSCD
1990年第1期6-11,共6页
Microelectronics
关键词
NMOS
晶体管
X射线
辐照
损伤
退火
Radiation damage, Annealing behaviour, X-Ray radiation, NMOS transistor
