摘要
采用聚焦连续波 CO2 激光束对 n型 In P基片进行局域加热 ,并利用专用的温度测量系统对 In P基片曝光区的温度分布及温度随时间的变化进行了测量 .结果表明 ,在基片初始温度为室温时 ,难以得到满足加工所要求的温度上升 .增大曝光区面积和对基片预热可以使温度上升的幅度达到要求 ,但温度的稳定性较差 .采用研制的温度控制系统 。
The n type InP substrate is locally heated by a 10.6μm focused CW(continuous wave) CO 2 laser beam. And the temperature of the small exposed region on the InP substrate is the main parameter that determines the process. So the temperature distributions of the exposed region are measured under different experimental conditions. And the processes of temperature rising with the time irradiated by the laser beam are recorded. The results show that when the temperature of the substrate before adding the laser beam is at room temperature, it is very difficult to adjust the temperature rise to satisfy the requirement of experiments. The amplitude of the temperature rise can meet the requirement through preheating the substrate, but the stability cannot. A closed loop temperature control system is developed to solve this problem, and the control precision of ±2℃ is obtained when the temperature is around 480℃.
基金
国家自然科学基金 (批准号 :60 2 770 0 8)
教育部科学技术研究 (项目号 :0 3 14 7)资助项目~~
关键词
INP
激光微细加工
激光诱导温度上升
InP
laser assisted microprocessing
laser induced temperature rise
