摘要
采用激光微细加工技术来制作单片集成光接收机的探测器,在制作过程中,用固态杂质源10.6 μm激光诱导Zn扩散工艺来进行探测器的p 区掺杂。制作出平面型顶部入射的InGaAs/InPPIN光探测器, 响应度为0.21A/W。分析了激光诱导扩散中影响探测器性能的因素,因此提出了扩散温度自动控制、扩散区 温度分布均匀化及激光焦斑与扩散区精确对准等相应的改进方法。
As the fundamentals of the fabrication of monolithically integrated optical receiver, a photodiode has been fabricated using laser assisted microprocessing. Laser induced local zinc diffusion has been used to form the p-n junction of the photodiode. The diffusion process was implemented by using the focused laser spot to heat the diffusion window. A spin-on film doped by Zn was used as the diffusion source. Lithography, passivation, electrodes fabrication and packaging are conventional, as the wafers don't endure high temperature in these steps. The responsivity of the fabricated Planar InGaAs/InP PIN photodiodes arrived 0.21 A/W. It was found that some factors in the laser induced diffusion process caused the low performance of the photodiodes. Then improvements including the automatic controlling of the diffusion temperature, the flatting of temperature distribution in the small diffusion region, and the aligning of the invisible laser focus spot and the diffusion region are proposed.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2005年第1期13-16,共4页
High Power Laser and Particle Beams
基金
国家自然科学基金资助课题(60277008)
教育部重点科技项目资助课题(03147)
中国电子科技集团电子科学研究院资助课题
关键词
激光微细加工
单片集成光接收机
PIN光探测器
激光诱导扩散
Laser applications
Micromachining
Monolithic integrated circuits
Semiconducting indium gallium arsenide
Semiconducting indium phosphide
