摘要
采用离子注入的方法在高电阻率的硅衬底上选择性地形成低阻区,制备了多孔硅牺牲层,研究用“先做微结构后形成多孔硅”的多孔硅牺牲层工艺制作微悬空结构。
Porous silicon is formed in locally defined areas on the Si substrate with high resistivity. To fabricated freestanding microstructure, the surface micromaching technique using porous silicon as sacrificial layer which is formed when microstructure has been processed is studied.
出处
《仪器仪表学报》
EI
CAS
CSCD
北大核心
2002年第z2期769-770,共2页
Chinese Journal of Scientific Instrument
关键词
微机械
多孔硅
牺牲层
Micromachining Porous silicon Sacrificial layer
