摘要
氮化硅薄膜作为一种新型的太阳电池减反射膜已被工业界认识和应用。应用PECVD(等离子体增强化学气相沉积)系统,以硅烷、氨气和氮气为气源在多晶硅片上制备了具有减反射作用的氮化硅薄膜。并研究了在沉积过程中,衬底温度、硅烷与氨气的流比以及射频功率对薄膜质量的影响。
As a potential anti-reflective coating, silicon nitride thin film was investigated and applied by the PV industry. By the plasma enhanced chemical vapor deposition system and the reactants of silane and ammonia as well nitrogen, silicon nitride thin film with excellent anti-reflective was prepared. The effects of substrate temperature, the flow ratio of silane over ammonia and the RF power on quality of thin film were studied.
出处
《中国稀土学报》
CAS
CSCD
北大核心
2003年第z1期162-163,共2页
Journal of the Chinese Society of Rare Earths
关键词
减反射膜
PECVD
氮化硅
anti-reflective coating
PECVD
silicon nitride
