摘要
利用正交实验方法,探讨PECVD法制备碳化硅薄膜沉积参数变化对其减反射性能的影响,并进一步研究不同沉积参数对薄膜沉积速率和折射率的影响规律。结果表明,沉积参数中衬底温度是影响碳化硅薄膜减反射性能的主要因素;薄膜的生长速率随着衬底温度和硅烷与甲烷流量比的升高而降低,并且薄膜的折射率随衬底温度的升高而增大,但气体流量比对折射率的影响不大。
In this work, the orthogonal design method is used to study the effect of deposition parameters of PECVD SiC thin films on the antireflection performance. Also, effect of the different deposition pa- rameters on the deposition rate and refractive index of SiC thin film is studied. It is found that substrate temperature is the major factor that affects the performance of SiC thin films. The growth rate of thin films decreased as the substrate temperature and flow ratio of Sill4 to OH4 increased. The refractive index of thin films increased with increasing substrate temperature, while the flow ratio of SiH4 to CH4 has little influence on the refractive index.
出处
《浙江理工大学学报（自然科学版）》
2010年第2期254-258,共5页
Journal of Zhejiang Sci-Tech University(Natural Sciences)
基金
浙江省自然科学基金项目(Y105468)
浙江理工大学人才引进基金(111383A4Y06283)
浙江省科技计划项目(2008C31031)
关键词
PECVD
碳化硅薄膜
正交实验
减反射性能
PECVD
SiC thin films
orthogonal experiment
antireflection performance
