We have developed an alkaline barrier slurry （named FA/O slurry） for barrier removal and evaluated its chemical mechanical planarization （CMP） performance through comparison with a commercially developed barrier s...We have developed an alkaline barrier slurry （named FA/O slurry） for barrier removal and evaluated its chemical mechanical planarization （CMP） performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.展开更多
Thin nanocomposite fflms based on tin dioxide with a low content of zinc oxide(0.5–5 mol.%)were obtained by the sol–gel method.The synthesized fflms are 300–600 nm thick and contains pore sizes of 19–29 nm.The res...Thin nanocomposite fflms based on tin dioxide with a low content of zinc oxide(0.5–5 mol.%)were obtained by the sol–gel method.The synthesized fflms are 300–600 nm thick and contains pore sizes of 19–29 nm.The resulting ZnO–SnO_(2) fflms were comprehensively studied by atomic force and Kelvin probe force microscopy,X-ray diffraction,scanning electron microscopy,and high-resolution X-ray photoelectron spectroscopy spectra.The photoconductivity parameters on exposure to light with a wavelength of 470 nm were also studied.The study of the photosensitivity kinetics of ZnO–SnO_(2) fflms showed that the fflm with the Zn:Sn ratio equal to 0.5:99.5 has the minimum value of the charge carrier generation time constant.Measurements of the activation energy of the conductivity,potential barrier,and surface potential of ZnO–SnO_(2) fflms showed that these parameters have maxima at ZnO concentrations of 0.5 mol.%and 1 mol.%.Films with 1 mol.%ZnO exhibit high response values when exposed to 5–50 ppm of nitrogen dioxide at operating temperatures of 200℃ and 250℃.展开更多
The surface roughness seriously affects the performance of devices after barrier CMP. Due to the high surface roughness of copper line, the local resistance of a device will be high when working, then the copper line ...The surface roughness seriously affects the performance of devices after barrier CMP. Due to the high surface roughness of copper line, the local resistance of a device will be high when working, then the copper line will overheat prompting the generation of electro-migration and the circuit will lose efficacy. Reducing the surface roughness of the copper line in barrier CMP is still an important research topic. The main factors influencing the surface roughness of copper line in alkaline barrier slurry are analyzed in the paper. Aimed at influencing the law on the surface roughness of copper line, using a new type of alkaline barrier slurry with a different p H of the chelating agent and changing the content of non-ionic surfactant, we then analyze the influencing law both on the surface roughness of copper line, and the influence mechanism. The experimental results show that with a chelating agent with a low p H value in the barrier slurry, the surface roughness of the copper line is 1.03 nm and it is the lowest in all of the barrier slurries, and with the increase of non-ionic surfactant concentration, the surface roughness of copper line is reduced to 0.43 nm, meeting the demand of further development of integrated circuits.展开更多
Improving energy efficiency in plasma NO removal is a critical issue.When the surface dielectric barrier discharge(SDBD)device is considered as a combination of multiple plasma actuators,the induced plasma aerodynamic...Improving energy efficiency in plasma NO removal is a critical issue.When the surface dielectric barrier discharge(SDBD)device is considered as a combination of multiple plasma actuators,the induced plasma aerodynamic effect cannot be ignored,which can affect the mass transfer,then affect the chemical reactions.Five SDBD devices with different electrode arrangements are studied for NO conversion.They correspond to different flow patterns.We find that the energy efficiency in an SDBD device with a common structure(Type 1)is 28%lower than that in SDBD devices with a special arrangement(Types 2–5).Two reasons may explain the results.First,fewer active species are produced in Type 1 because the development of discharge is hindered by the mutually exclusive electric field forces caused by the symmetrically distributed charged particles.Second,the plasma wind induced by the plasma actuator can enhance the mass and heat transfer.The mixing of reactants and products is better in Types 2–5 than Type 1 due to higher turbulence kinetic energy.展开更多
In this paper, we reported nano-scale SiOx coatings deposited on polyethylene terephthalate （PET） webs by microwave surface-wave assisted plasma enhanced chemical vapor deposition for the purpose of improving their ...In this paper, we reported nano-scale SiOx coatings deposited on polyethylene terephthalate （PET） webs by microwave surface-wave assisted plasma enhanced chemical vapor deposition for the purpose of improving their barrier properties. Oxygen （O2） and hexamethyl- disiloxane （HMDSO） were employed as oxidant gas and Si monomer during SiOx deposition, re- spectively. Analysis by Fourier transform infrared spectroscope （FTIR） for chemical structure and observation by atomic force microscopy （AFM） for surface morphology of SiO~ coatings demon- strated that both chemical compounds and surface feature of coatings have a remarkable influence on the coating barrier properties. It is noted that the processing parameters play a critical role in the barrier properties of coatings. After optimization of the SiOx coatings deposition conditions, i.e. the discharge power of 1500 W, 2 ： 1 of O2 ： HMDSO ratio and working pressure of 20 Pa, a better barrier property was achieved in this work.展开更多
Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically ...Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications.展开更多
基金Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308)the National Natural Science Foundation of China(No.10676008)+1 种基金the Tianjin Natural Science Foundation of China(No.10JCZDJC15500)the Fund Project of Hebei Provincial Department of Education,China(No.2011128)
文摘We have developed an alkaline barrier slurry （named FA/O slurry） for barrier removal and evaluated its chemical mechanical planarization （CMP） performance through comparison with a commercially developed barrier slurry. The FA/O slurry consists of colloidal silica, which is a complexing and an oxidizing agent, and does not have any inhibitors. It was found that the surface roughness of copper blanket wafers polished by the FA/O slurry was lower than the commercial barrier slurry, demonstrating that it leads to a better surface quality. In addition, the dishing and electrical tests also showed that the patterned wafers have a lower dishing value and sheet resistance as compared to the commercial barrier slurry. By comparison, the FA/O slurry demonstrates good planarization performance and can be used for barrier CMP.
基金The authors are grateful to the PHENMA 2021–2022 conference for the possibility of manuscript publication.The research was carried out at the expense of the grant of the Russian Science Foundation No.22-29-00621,(https://rscf.ru/project/22-29-00621/)at the Southern Federal University.
文摘Thin nanocomposite fflms based on tin dioxide with a low content of zinc oxide(0.5–5 mol.%)were obtained by the sol–gel method.The synthesized fflms are 300–600 nm thick and contains pore sizes of 19–29 nm.The resulting ZnO–SnO_(2) fflms were comprehensively studied by atomic force and Kelvin probe force microscopy,X-ray diffraction,scanning electron microscopy,and high-resolution X-ray photoelectron spectroscopy spectra.The photoconductivity parameters on exposure to light with a wavelength of 470 nm were also studied.The study of the photosensitivity kinetics of ZnO–SnO_(2) fflms showed that the fflm with the Zn:Sn ratio equal to 0.5:99.5 has the minimum value of the charge carrier generation time constant.Measurements of the activation energy of the conductivity,potential barrier,and surface potential of ZnO–SnO_(2) fflms showed that these parameters have maxima at ZnO concentrations of 0.5 mol.%and 1 mol.%.Films with 1 mol.%ZnO exhibit high response values when exposed to 5–50 ppm of nitrogen dioxide at operating temperatures of 200℃ and 250℃.
文摘The surface roughness seriously affects the performance of devices after barrier CMP. Due to the high surface roughness of copper line, the local resistance of a device will be high when working, then the copper line will overheat prompting the generation of electro-migration and the circuit will lose efficacy. Reducing the surface roughness of the copper line in barrier CMP is still an important research topic. The main factors influencing the surface roughness of copper line in alkaline barrier slurry are analyzed in the paper. Aimed at influencing the law on the surface roughness of copper line, using a new type of alkaline barrier slurry with a different p H of the chelating agent and changing the content of non-ionic surfactant, we then analyze the influencing law both on the surface roughness of copper line, and the influence mechanism. The experimental results show that with a chelating agent with a low p H value in the barrier slurry, the surface roughness of the copper line is 1.03 nm and it is the lowest in all of the barrier slurries, and with the increase of non-ionic surfactant concentration, the surface roughness of copper line is reduced to 0.43 nm, meeting the demand of further development of integrated circuits.
基金supported by the National Natural Science Foundation of China(60906053,61204069,61274118,61306144,61504079,and 11605112)Scientific and Innovative Action Plan of Shanghai(15DZ1160800 and 17XD1702400)China Postdoctoral Science Foundation(2016 M601595).
文摘Improving energy efficiency in plasma NO removal is a critical issue.When the surface dielectric barrier discharge(SDBD)device is considered as a combination of multiple plasma actuators,the induced plasma aerodynamic effect cannot be ignored,which can affect the mass transfer,then affect the chemical reactions.Five SDBD devices with different electrode arrangements are studied for NO conversion.They correspond to different flow patterns.We find that the energy efficiency in an SDBD device with a common structure(Type 1)is 28%lower than that in SDBD devices with a special arrangement(Types 2–5).Two reasons may explain the results.First,fewer active species are produced in Type 1 because the development of discharge is hindered by the mutually exclusive electric field forces caused by the symmetrically distributed charged particles.Second,the plasma wind induced by the plasma actuator can enhance the mass and heat transfer.The mixing of reactants and products is better in Types 2–5 than Type 1 due to higher turbulence kinetic energy.
基金supported financially by National Natural Science Foundation of China(Nos.1117502411375031)+8 种基金Beijing Natural Science Foundation(No.1112012)the National Science & Technology Pillar Program for the 12th Five-year Plan2011BAD24B01Beijing Education Committee Foundation of Science and Technology(Nos.KM2011100015008KM201010015005)BIGC Key Project(No.23190113051)PHR20110516PHR201107145Fujian Provincial Department of Science and Technology Key Project of China(No.2012H0008)
文摘In this paper, we reported nano-scale SiOx coatings deposited on polyethylene terephthalate （PET） webs by microwave surface-wave assisted plasma enhanced chemical vapor deposition for the purpose of improving their barrier properties. Oxygen （O2） and hexamethyl- disiloxane （HMDSO） were employed as oxidant gas and Si monomer during SiOx deposition, re- spectively. Analysis by Fourier transform infrared spectroscope （FTIR） for chemical structure and observation by atomic force microscopy （AFM） for surface morphology of SiO~ coatings demon- strated that both chemical compounds and surface feature of coatings have a remarkable influence on the coating barrier properties. It is noted that the processing parameters play a critical role in the barrier properties of coatings. After optimization of the SiOx coatings deposition conditions, i.e. the discharge power of 1500 W, 2 ： 1 of O2 ： HMDSO ratio and working pressure of 20 Pa, a better barrier property was achieved in this work.
基金We acknowledge the financial support from the National Natural Science Foundation of China(Nos.11874427,11874423).Dr.H an H uang acknowledges support from the Innovation-Driven project of Central South University(No.2017CX018)and from the Natural Science Foundation of H unan province(No.2016JJ1021).Mr.Xiaoming Zheng acknowledges the support from the Fundamental Research Funds for the Central Universities of Central South University(No.2017zzts066).
文摘Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications.
