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Investigation of Microwave Surface-Wave Plasma Deposited SiO_x Coatings on Polymeric Substrates 被引量:3

Investigation of Microwave Surface-Wave Plasma Deposited SiO_x Coatings on Polymeric Substrates
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摘要 In this paper, we reported nano-scale SiOx coatings deposited on polyethylene terephthalate (PET) webs by microwave surface-wave assisted plasma enhanced chemical vapor deposition for the purpose of improving their barrier properties. Oxygen (O2) and hexamethyl- disiloxane (HMDSO) were employed as oxidant gas and Si monomer during SiOx deposition, re- spectively. Analysis by Fourier transform infrared spectroscope (FTIR) for chemical structure and observation by atomic force microscopy (AFM) for surface morphology of SiO~ coatings demon- strated that both chemical compounds and surface feature of coatings have a remarkable influence on the coating barrier properties. It is noted that the processing parameters play a critical role in the barrier properties of coatings. After optimization of the SiOx coatings deposition conditions, i.e. the discharge power of 1500 W, 2 : 1 of O2 : HMDSO ratio and working pressure of 20 Pa, a better barrier property was achieved in this work. In this paper, we reported nano-scale SiOx coatings deposited on polyethylene terephthalate (PET) webs by microwave surface-wave assisted plasma enhanced chemical vapor deposition for the purpose of improving their barrier properties. Oxygen (O2) and hexamethyl- disiloxane (HMDSO) were employed as oxidant gas and Si monomer during SiOx deposition, re- spectively. Analysis by Fourier transform infrared spectroscope (FTIR) for chemical structure and observation by atomic force microscopy (AFM) for surface morphology of SiO~ coatings demon- strated that both chemical compounds and surface feature of coatings have a remarkable influence on the coating barrier properties. It is noted that the processing parameters play a critical role in the barrier properties of coatings. After optimization of the SiOx coatings deposition conditions, i.e. the discharge power of 1500 W, 2 : 1 of O2 : HMDSO ratio and working pressure of 20 Pa, a better barrier property was achieved in this work.
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2014年第1期37-40,共4页 等离子体科学和技术(英文版)
基金 supported financially by National Natural Science Foundation of China(Nos.11175024 11375031) Beijing Natural Science Foundation(No.1112012) the National Science & Technology Pillar Program for the 12th Five-year Plan 2011BAD24B01 Beijing Education Committee Foundation of Science and Technology(Nos.KM2011100015008 KM201010015005) BIGC Key Project(No.23190113051) PHR20110516 PHR201107145 Fujian Provincial Department of Science and Technology Key Project of China(No.2012H0008)
关键词 silicon oxide barrier properties microwave surface wave PET silicon oxide, barrier properties, microwave surface wave, PET
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